Paper
19 March 2012 Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials
Author Affiliations +
Abstract
Negative photoresist materials for 248 nm (KrF excimer laser) implant applications are of interest to research and development recently, due to the ever-present demand to shrink lithographically-patterned device dimensions at an affordable cost. Challenges to developing such a successful resist are the topography of the substrate and subsequent reflectivity complexities. Substrate reflectivity control, resist profile, and critical dimension (CD) uniformity are critical issues that must be addressed to enable robust lithography performance at high KrF numerical aperture. The design, synthesis and characterization of a series of polymers for negative developable bottom anti-reflective coating (NDBARC) materials suitable for KrF negative implant resists is described.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sen Liu, Kuang-Jung Chen, Wu-Song Huang, Steven Holmes, Karen Huang, Nicolette Fender, Ranee Kwong, Brian Osborn, Cherry Tang, Chung-Hsi Wu, and Mark Slezak "Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251B (19 March 2012); https://doi.org/10.1117/12.916158
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Reflectivity

Semiconducting wafers

Silicon

Bottom antireflective coatings

Lithography

Chromophores

RELATED CONTENT

New materials for 193-nm bottom antireflective coatings
Proceedings of SPIE (June 12 2003)
Thermal properties of COMA materials
Proceedings of SPIE (August 24 2001)
Development of 193-nm organic BARC
Proceedings of SPIE (August 24 2001)

Back to Top