Development of a high-sensitivity UV photocathode using GaN film that works in transmission mode

Yoshihiro Ishigami; Keisuke Akiyama; Takaaki Nagata; Kazumasa Kato; Tsuneo Ihara; Kimitsugu Nakamura; Itaru Mizuno; Tetsuji Matsuo; Emiko Chino; Hiroyuki Kyushima

doi:10.1117/12.918396

18 June 2012 Development of a high-sensitivity UV photocathode using GaN film that works in transmission mode

Yoshihiro Ishigami, Keisuke Akiyama, Takaaki Nagata, Kazumasa Kato, Tsuneo Ihara, Kimitsugu Nakamura, Itaru Mizuno, Tetsuji Matsuo, Emiko Chino, Hiroyuki Kyushima

Author Affiliations +

Proceedings Volume 8359, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI; 83590U (2012) https://doi.org/10.1117/12.918396
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We developed a high-sensitivity GaN photocathode that works in transmission mode. It has 40.9 % quantum efficiency at 310 nm wavelength. Conventional GaN photocathodes, both transmission mode and reflection mode, are made on a sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). In reflection mode, a GaN photocathode has very high quantum efficiency (QE) of over 50 %. However, in transmission mode, the quantum efficiency of a GaN photocathode was about 25 % at 240 nm with this technique. Therefore, we developed a new GaN photocathode using a glass-bonding technique, where a GaN thin film was bonded to a glass face plate. We found out that constituting an Al- GaN layer on the light incidence side of the photocathode surface provided higher QE than a sole GaN layer type for transmission mode. We focused on the band bending of the photocathode, and analyzed QE for both transmission mode and reflection mode. We then verified the effectiveness of the AlGaN layer using the results from the analysis. The high-sensitivity UV photocathode will be used for flame detection, corona discharge observation, and other UV imaging.

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Yoshihiro Ishigami, Keisuke Akiyama, Takaaki Nagata, Kazumasa Kato, Tsuneo Ihara, Kimitsugu Nakamura, Itaru Mizuno, Tetsuji Matsuo, Emiko Chino, and Hiroyuki Kyushima "Development of a high-sensitivity UV photocathode using GaN film that works in transmission mode", Proc. SPIE 8359, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI, 83590U (18 June 2012); https://doi.org/10.1117/12.918396

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