Properties Of Multiple Quantum Wells And Their Use In High-Speed Detectors And Modulators

Pallab Bhattacharya

doi:10.1117/12.967516

1 January 1987 Properties Of Multiple Quantum Wells And Their Use In High-Speed Detectors And Modulators

Pallab Bhattacharya

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967516
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Citation Download Citation

Pallab Bhattacharya "Properties Of Multiple Quantum Wells And Their Use In High-Speed Detectors And Modulators", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967516

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