Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region

Hua Hua; Xiaohui Xie; Xiaoning Hu

doi:10.1117/12.975948

15 October 2012 Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region

Hua Hua, Xiaohui Xie, Xiaoning Hu

Author Affiliations +

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84191A (2012) https://doi.org/10.1117/12.975948
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

This paper analyzes the dark current characteristic of two different sizes at different temperature. The wavelength is 12 μm. We find that the main mechanism of the dark current is band-to-band tunnel current at 20 k-30 k. By fitting the ideal factor, we find that at temperature of 80 k-100 k, the dark current is a mixture of diffusion current, g-r current. We find the large size is better by comparing the R₀A-V curves. At 45 k-60 k, the dark current is a mixture of trap-assisted tunnel current and band-to-band tunnel current. An interesting thing is that in this temperature area, the different R₀-V curves have a same sharp cross which does not exist in the 20 k-30 k area or 80 k-100 k area. At this point the trap-assisted tunnel is equal to the band-to-band tunnel. We calculated the trap density of depletion region which is about 1.38×10¹¹ cm^-3 at 55 k.

Citation Download Citation

Hua Hua, Xiaohui Xie, and Xiaoning Hu "Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191A (15 October 2012); https://doi.org/10.1117/12.975948

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KEYWORDS

Diffusion

Mercury cadmium telluride

Temperature metrology

Bismuth

Diodes

Head

Imaging devices

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