Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot

Yaoming Zhu; Xue Li; Jun Wei; Jianwei Li; Hengjing Tang; Hai-mei Gong

doi:10.1117/12.975736

15 October 2012 Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot

Yaoming Zhu, Xue Li, Jun Wei, Jianwei Li, Hengjing Tang, Hai-mei Gong

Author Affiliations +

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84191I (2012) https://doi.org/10.1117/12.975736
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

With the development of material growth and device technologies, the pixel density becomes much higher. The pixel size and the spacing between pixels have been becoming smaller and smaller, causing the cross talk of the neighboring pixels acuter. Linear InGaAs detector arrays with 25 μm pitch and 2 μm spacing were fabricated, and the modulation transfer function of detector arrays with infrared lens was measured using a system of collimator tube. A tiny light dot produced by the collimator tube was used to analyze and calculated the cross talk of the detector with conserved absorber around the photosensitive mesa, and the cross talk between two neighboring pixels was approximately estimated. With the conserved absorber structure, the electronic cross talk is dominant in the cross talks between neighboring pixels.

Citation Download Citation

Yaoming Zhu, Xue Li, Jun Wei, Jianwei Li, Hengjing Tang, and Hai-mei Gong "Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191I (15 October 2012); https://doi.org/10.1117/12.975736

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