Paper
17 October 2012 A 1.65 µm region external cavity laser diode using an InP gain chip and a fibre Bragg grating
F. Chen, J. Hodgkinson, S. Staines, S. James, R. Tatam
Author Affiliations +
Proceedings Volume 8421, OFS2012 22nd International Conference on Optical Fiber Sensors; 84215F (2012) https://doi.org/10.1117/12.975302
Event: OFS2012 22nd International Conference on Optical Fiber Sensor, 2012, Beijing, China
Abstract
We present the construction of an external cavity laser (ECL) diode using an InP semiconductor gain chip and a fibre Bragg grating (FBG), designed to have an emission wavelength that coincides with an absorption line of methane, to be used for spectroscopic gas sensing. The FBG was employed as a wavelength selective and feedback element, which will potentially provide the laser with wavelength tuning capability. Narrow linewidth lasing output of less than 5 MHz was achieved. To our knowledge, this is the first FBG based ECL in the 1.65 µm region.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Chen, J. Hodgkinson, S. Staines, S. James, and R. Tatam "A 1.65 µm region external cavity laser diode using an InP gain chip and a fibre Bragg grating", Proc. SPIE 8421, OFS2012 22nd International Conference on Optical Fiber Sensors, 84215F (17 October 2012); https://doi.org/10.1117/12.975302
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Cited by 2 scholarly publications.
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KEYWORDS
Fiber Bragg gratings

Semiconductor lasers

Methane

Absorption

Diodes

Reflectivity

Semiconductors

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