Surface plasmon detectors on silicon

Anthony Olivieri; Pierre Berini

doi:10.1117/12.922863

1 May 2012 Surface plasmon detectors on silicon

Anthony Olivieri, Pierre Berini

Proceedings Volume 8424, Nanophotonics IV; 84241C (2012) https://doi.org/10.1117/12.922863
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

This paper outlines the experimental methods and results obtained from the testing of asymmetric gold surface plasmon waveguide detectors on an epitaxial silicon structure at optical wavelengths of 1550 nm and 1310 nm. Using end-fire coupling, responsivities of up to 0.88 mA/W at a 100 mV reverse bias were measured. The photo-detection mechanism is based on the internal photoelectric effect. The simple and compact design allow for these devices to be integrated and densely populated with Si-based optoelectronics. The ability to detect wavelengths below the bandgap of Si is also appealing. 2D responsivity maps are generated using piezoelectric positioners controlled using Labview.

Citation Download Citation

Anthony Olivieri and Pierre Berini "Surface plasmon detectors on silicon", Proc. SPIE 8424, Nanophotonics IV, 84241C (1 May 2012); https://doi.org/10.1117/12.922863

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