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In the paper the influence of luminescent layer made of tellurite glass doped with Yb3+/Er3+ on parameters of
silicon photovoltaic cell in the near infrared region was investigated. Luminescence properties of the fabricated
glass under 976 nm excitation were measured. As a result of the conducted works enhancement of conversion
efficiency of NIR radiation utilizing upconversion process in tellurite glass doped with RE was obtained.
Parameters of PV cell with active layer: open circuit voltage increase of 5,5% for sample codoped with Yb3+/Er3+
system and 2,7% for sample doped with Er3+, 100% is the signal from pure PV cell illuminated by 976 nm laser.
Marek Wyrwas,Jacek Żmojda,Dominik Dorosz,Marcin Kochanowicz,Kamil Iwanowicz,Tomasz Ragin,Wojciech Mazerski, andJan Dorosz
"Active materials to enhance the efficiency of PV systems", Proc. SPIE 8454, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2012, 845415 (15 October 2012); https://doi.org/10.1117/12.2000175
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Marek Wyrwas, Jacek Żmojda, Dominik Dorosz, Marcin Kochanowicz, Kamil Iwanowicz, Tomasz Ragin, Wojciech Mazerski, Jan Dorosz, "Active materials to enhance the efficiency of PV systems," Proc. SPIE 8454, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2012, 845415 (15 October 2012); https://doi.org/10.1117/12.2000175