Testing of CMOS devices in NIF's harsh neutron environment

Alan T. Teruya; Perry M. Bell; Scott Burns; Chris Hagmann; James D. Moody; Mike Richardson

doi:10.1117/12.930132

15 October 2012 Testing of CMOS devices in NIF's harsh neutron environment

Alan T. Teruya, Perry M. Bell, Scott Burns, Chris Hagmann, James D. Moody, Mike Richardson

Proceedings Volume 8505, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion; 85050C (2012) https://doi.org/10.1117/12.930132
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

Vendor supplied CMOS sensors were exposed to 14 MeV neutrons on yield shots in NIF and examined for damage. The sensors were exposed to multiple shots with a maximum fluence on one of the sensors of 4.3E11 n/cm². The results of post-shot testing will be presented. LLNL is investigating the suitability of CMOS imaging sensors for use in the camera of the ARIANE diagnostic which will mitigate the effects of the NIF neutron environment by dumping photoelectrons during the neutron pulse and then recording an image stored on a long persistence phosphor.

Citation Download Citation

Alan T. Teruya, Perry M. Bell, Scott Burns, Chris Hagmann, James D. Moody, and Mike Richardson "Testing of CMOS devices in NIF's harsh neutron environment", Proc. SPIE 8505, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion, 85050C (15 October 2012); https://doi.org/10.1117/12.930132

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