Paper
24 October 2012 Inductively coupled plasma etching for delineation of InAs/GaSb pixels
Jean Nguyen, John Gill, Sir B. Rafol, Alexander Soibel, Arezou Khoshakhlagh, David Ting, Sam Keo, Anita Fisher, Edward Luong, John Liu, Jason Mumolo, Sarath D. Gunapala
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Abstract
We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 μm thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10-4 A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 μm at the 50 % peak and the maximum quantum efficiency was 54 % at 5.6 μm. The arrays had 81 % fill factor with 97 % operability with noise equivalent difference temperature (NEΔT) of 18.6 mK and a mean detectivity of D*=1.3 x 1011 Hz1/2/W.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean Nguyen, John Gill, Sir B. Rafol, Alexander Soibel, Arezou Khoshakhlagh, David Ting, Sam Keo, Anita Fisher, Edward Luong, John Liu, Jason Mumolo, and Sarath D. Gunapala "Inductively coupled plasma etching for delineation of InAs/GaSb pixels", Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 851103 (24 October 2012); https://doi.org/10.1117/12.930046
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KEYWORDS
Etching

Staring arrays

Sensors

Dry etching

Long wavelength infrared

Photomasks

Superlattices

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