Paper
15 October 2012 Tuning the photoluminescence of ZnO thin films by indium doping
Saraswathi Chirakkara, S .B. Krupanidhi
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492U (2012) https://doi.org/10.1117/12.927412
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown on p-type boron doped Si substrates by pulsed laser deposition (PLD). The effect of indium concentration on the structural, optical and electrical properties of the film was studied. XRD, XPS and Raman studies confirm the single phase formation and successful doping of In in to ZnO. We observed various photoluminescence emissions, ranging from UV to visible, with the incorporation of In into ZnO. Room temperature Current-Voltage (I-V) characteristics showed good p-n junction properties for n-type-undoped and In doped ZnO with p-type substrates. The turn on voltage was observed to be decreasing with increase in In composition.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saraswathi Chirakkara and S .B. Krupanidhi "Tuning the photoluminescence of ZnO thin films by indium doping", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492U (15 October 2012); https://doi.org/10.1117/12.927412
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc oxide

Indium

Thin films

Doping

Raman spectroscopy

Luminescence

Zinc

Back to Top