Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires

Binh-Minh Nguyen; Yang Liu; Wei Tang; S. Tom Picraux; Shadi A. Dayeh

doi:10.1117/12.2008676

4 February 2013 Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires

Binh-Minh Nguyen, Yang Liu, Wei Tang, S. Tom Picraux, Shadi A. Dayeh

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863118 (2013) https://doi.org/10.1117/12.2008676
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In recent years, transistor technology has scaled down to sub-20 nm channel length with many performance-boosting techniques at the material and device levels in order to meet the increasing demand for higher performance electronics. The nanowire (NW) device architecture has proven itself as a viable candidate for the sub-20 nm generation transistors. Compared to Si NWs, the Ge/Si core/shell NW alternative can supply larger on-current due to the increased confined hole mobility and ohmic behavior at the Ni-alloyed drain/source contacts. It is thus important to understand transport mechanisms in this core/shell structure, and develop pathway to realize ultra-short channel core/shell NW field effect transistors (FETs). In this paper, we report the growth of Ge/Si concentric NWs with precise control of Si shell thickness. Performance of FETs fabricated from core/shell NWs exhibited a clear dependence on NWs’ diameters, with steeper sub-threshold slopes for smaller NWs. An 18 nm diameter Ge/Si heterostructure FET exhibited sub-threshold swing of 102 mV/decade, with a maximum transconductance of 3.4 μS at VDS =-100 mV. Finally, transmission electron microscopy was utilized to monitor and control the solid state reaction between Ni contacts and Ge/Si NWs, resulting in ultrascaled channel lengths, as short as 5 nm.

Citation Download Citation

Binh-Minh Nguyen, Yang Liu, Wei Tang, S. Tom Picraux, and Shadi A. Dayeh "Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863118 (4 February 2013); https://doi.org/10.1117/12.2008676

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available