Electronic temperature in phonon-photon-phonon terahertz quantum
cascade devices with high-operating temperature performance

G. Scamarcio; P. Patimisco; M. V. Santacroce; P. Tempesta; V. Spagnolo; M. S. Vitiello; E. Dupont; S. Fathololoumi; S. R. Laframboise; S. G Razavipour; Z. Wasilewski; D. Ban; H. C. Liu

doi:10.1117/12.2006874

4 February 2013 Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance

G. Scamarcio, P. Patimisco, M. V. Santacroce, P. Tempesta, V. Spagnolo, M. S. Vitiello, E. Dupont, S. Fathololoumi, S. R. Laframboise, S. G Razavipour, Z. Wasilewski, D. Ban, H. C. Liu

Author Affiliations +

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 86312C (2013) https://doi.org/10.1117/12.2006874
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We report on the experimental measurement of active region lattice (T_L) and electronic temperatures (T_e) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (T_e - T_L) ~ 40 K much smaller than the typical value (T_e - T_L ~ 100 K) reported for resonantphonon THz QCLs.

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G. Scamarcio, P. Patimisco, M. V. Santacroce, P. Tempesta, V. Spagnolo, M. S. Vitiello, E. Dupont, S. Fathololoumi, S. R. Laframboise, S. G Razavipour, Z. Wasilewski, D. Ban, and H. C. Liu "Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312C (4 February 2013); https://doi.org/10.1117/12.2006874

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KEYWORDS

Quantum cascade lasers

Terahertz radiation

Luminescence

Laser scattering

Scattering

Temperature metrology

Calibration

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