Modeling strategies for EUV mask multilayer defect dispositioning and repair

Andreas Erdmann; Peter Evanschitzky; Tristan Bret; Rik Jonckheere

doi:10.1117/12.2011444

1 April 2013 Modeling strategies for EUV mask multilayer defect dispositioning and repair

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86790Y (2013) https://doi.org/10.1117/12.2011444
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The paper describes a modeling approach, which enables systematic printing and compensation repair studies for multilayer defects on EUV-masks. The procedure combines an approximative model for the pre-optimization of required repair shapes with an accurate and efficient, fully rigorous modeling of the final repair shape. The obtained simulations results demonstrate the capabilities of compensation repair to reduce the impact of defects and confirm the eligibility of this technique as a valuable and important ingredient of a defect mitigation strategy for EUV masks.

Citation Download Citation

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, and Rik Jonckheere "Modeling strategies for EUV mask multilayer defect dispositioning and repair", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790Y (1 April 2013); https://doi.org/10.1117/12.2011444

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