Evaluation of an advanced dual hard mask stack for high resolution pattern transfer

J. Paul; M. Rudolph; S. Riedel; X. Thrun; S. Wege; C. Hohle

doi:10.1117/12.2018247

29 March 2013 Evaluation of an advanced dual hard mask stack for high resolution pattern transfer

J. Paul, M. Rudolph, S. Riedel, X. Thrun, S. Wege, C. Hohle

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850V (2013) https://doi.org/10.1117/12.2018247
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

A dual hard mask concept for high resolution patterning has been evaluated with focus on highly selective etching processes for semiconductor manufacturing. The integration of thin SiO₂ and ZrO₂ hard mask materials enables highly selective patterning via plasma etch processes for future technology nodes. The patterning sequence is demonstrated for hole arrays with sizes down to 25 nm using a 50 nm thin resist which leads to the fabrication of trenches in silicon with aspect ratios up to 20:1. Alternative ZrO₂ based materials were investigated with focus on surface roughness reduction since it influences the final line etch roughness. Here Si-doped ZrO₂ (ALD) and spin-coatable ZrO₂ were compared to the pure and crystalline ZrO₂ as main selective material.

Citation Download Citation

J. Paul, M. Rudolph, S. Riedel, X. Thrun, S. Wege, and C. Hohle "Evaluation of an advanced dual hard mask stack for high resolution pattern transfer", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850V (29 March 2013); https://doi.org/10.1117/12.2018247

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