Mechanism of sensitivity of a three-collector magnetotransistor

V. V. Amelichev; A. A. Cheremisinov; S. A. Polomoshnov; R. D. Tikhonov

doi:10.1117/12.2018388

8 January 2013 Mechanism of sensitivity of a three-collector magnetotransistor

V. V. Amelichev, A. A. Cheremisinov, S. A. Polomoshnov, R. D. Tikhonov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000Q (2013) https://doi.org/10.1117/12.2018388
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The sensitivity of bipolar magnetotransistor with the base in the well - 3CBМТBW has been studied. A low velocity of surface recombination and an extraction of the injected electrons by a base–well р-n junction determined operating mode with a deviation of two flows of charge carriers has been established. The voltage magnetosensitivity (~11 V/T) has been determined.

Citation Download Citation

V. V. Amelichev, A. A. Cheremisinov, S. A. Polomoshnov, and R. D. Tikhonov "Mechanism of sensitivity of a three-collector magnetotransistor", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000Q (8 January 2013); https://doi.org/10.1117/12.2018388

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