Paper
11 June 2013 A low-noise, extended dynamic range 1.3 megapixel InGaAs array
Wim Vereecken, Urbain Van Bogget, Thierry Colin, Rosa-Maria Vinella, Jo Das, Patrick Merken, Jan Vermeiren
Author Affiliations +
Abstract
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wim Vereecken, Urbain Van Bogget, Thierry Colin, Rosa-Maria Vinella, Jo Das, Patrick Merken, and Jan Vermeiren "A low-noise, extended dynamic range 1.3 megapixel InGaAs array", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870404 (11 June 2013); https://doi.org/10.1117/12.2019030
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Cited by 2 scholarly publications.
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KEYWORDS
Staring arrays

Indium gallium arsenide

Short wave infrared radiation

Sensors

Cadmium sulfide

Photodiodes

Analog electronics

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