Paper
29 May 2013 Active frequency selective surfaces
Walter R. Buchwald, Joshua Hendrickson, Justin W. Cleary, Junpeng Guo
Author Affiliations +
Abstract
Split ring resonator arrays are investigated for use as active elements for the realization of voltage controllable frequency selective surfaces. Finite difference time domain simulations suggest the absorptive and reflective properties of such surfaces can be externally controlled through modifications of the split ring resonator gap impedance. In this work, such voltage-controlled resonance tuning is obtained through the addition of an appropriately designed high electron mobility transistor positioned across the split ring resonator gap. It is shown that a 0.5μm gate length high electron mobility transistor allows voltage controllable switching between the two resonant conditions associated with a split ring resonator and that of a closed loop geometry when the surface is illuminated with THz radiation. Partial switching between these two resonant conditions is observed at larger gate lengths. Such active frequency selective surfaces are proposed, for example, for use as modulators in THz detection schemes and as RF filters in radar applications when scaled to operate at GHz frequencies.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Walter R. Buchwald, Joshua Hendrickson, Justin W. Cleary, and Junpeng Guo "Active frequency selective surfaces", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250A (29 May 2013); https://doi.org/10.1117/12.2016081
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Field effect transistors

FSS based metamaterials

Plasma

Split ring resonators

Finite-difference time-domain method

Dielectrics

Metals

Back to Top