Paper
29 May 2013 Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing
V. Mitin, Jae Kyu Choi, G. Thomain, K. Sablon, S. Oktyabrsky, N. Vagidov, A. Sergeev
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Abstract
Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Mitin, Jae Kyu Choi, G. Thomain, K. Sablon, S. Oktyabrsky, N. Vagidov, and A. Sergeev "Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250D (29 May 2013); https://doi.org/10.1117/12.2015830
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KEYWORDS
Nanomaterials

Sensors

Gallium arsenide

Quantum wells

Doping

Quantum dots

Optical pumping

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