White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers

Shing Wei Fang; H. J. Chen; Ming Chang Shih

doi:10.1117/12.2018955

22 June 2013 White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers

Shing Wei Fang, H. J. Chen, Ming Chang Shih

Proceedings Volume 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013); 87691W (2013) https://doi.org/10.1117/12.2018955
Event: International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 2013, Singapore, Singapore

Abstract

We demonstrate the fabrication of a white light blinded IR photo-detector sing a Si based metal insulator semiconductor (MIS) structure with multi-layers of SiO₂/TiO₂ dielectric and its characteristics of photo -responsivity. Spectral responsivity peak at 850 nm with high discrimination in visible light had been achieved in a MIS photo -detector with multiple layers of SiO₂/TiO₂ dielectrics. Reflection spectral measurements and I -V characteristics of the SiO₂/TiO₂ multi-layers with various layer number and thickness were used to explore the photo -detection in this MIS device structure. We found that high spectral discrimination of visible light of this multi-dielectric layers MIS device is due to the optical filtering property by these multi -layers and the mid-band gap impurity states existed at the interface between the Si substrate and these dielectric layers.

Citation Download Citation

Shing Wei Fang, H. J. Chen, and Ming Chang Shih "White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers", Proc. SPIE 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 87691W (22 June 2013); https://doi.org/10.1117/12.2018955

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