Paper
25 September 2013 Active gating as a method to inhibit the crosstalk of single photon avalanche diodes in a shared well
Anna Vilà, Eva Vilella, Andreu Montiel, Oscar Alonso, Angel Dieguez
Author Affiliations +
Abstract
Advances in SPAD arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. For measurements triggered only in well-defined time periods that can be known in advance, the pixels can be inhibited before the arrival of the crosstalk charge. This paper reports the crosstalk characterization of in an array of SPADs fabricated in a conventional CMOS technology in the same n-well (fill factor 67%). A long gating time gives a crosstalk not less than 2.75%, while reducing it below 2.5 ns completely eliminates crosstalk, as predicted by the theory and by TCAD simulations.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anna Vilà, Eva Vilella, Andreu Montiel, Oscar Alonso, and Angel Dieguez "Active gating as a method to inhibit the crosstalk of single photon avalanche diodes in a shared well", Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88470S (25 September 2013); https://doi.org/10.1117/12.2024212
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Avalanche photodiodes

CMOS technology

Single photon

Avalanche photodetectors

Diodes

Electron beams

RELATED CONTENT

Figures of merit for CMOS SPADs and arrays
Proceedings of SPIE (May 06 2013)
C RED One and C RED 2 SWIR advanced...
Proceedings of SPIE (April 28 2017)
CMOS compatible avalanche photodiode (APD) arrays
Proceedings of SPIE (September 13 1994)
A single-photon detector without cooler
Proceedings of SPIE (November 30 2012)

Back to Top