A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements

Keith Standiford; Christian Bürgel

doi:10.1117/12.2023109

9 September 2013 A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements

Keith Standiford, Christian Bürgel

Author Affiliations +

Proceedings Volume 8880, Photomask Technology 2013; 88801M (2013) https://doi.org/10.1117/12.2023109
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance of this Mask Proximity Correction software should not be specified based solely on traditional mask linearity measures. We propose a new mask linearity specification based on Time Dependent Dielectric Breakdown requirements for metal layers.

Citation Download Citation

Keith Standiford and Christian Bürgel "A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements", Proc. SPIE 8880, Photomask Technology 2013, 88801M (9 September 2013); https://doi.org/10.1117/12.2023109

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE