Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software

Sergey Babin; Sergey Borisov; Elena Patyukova

doi:10.1117/12.2032414

1 October 2013 Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software

Sergey Babin, Sergey Borisov, Elena Patyukova

Author Affiliations +

Proceedings Volume 8886, 29th European Mask and Lithography Conference; 88860E (2013) https://doi.org/10.1117/12.2032414
Event: 29th European Mask and Lithography Conference, 2013, Dresden, Germany

Abstract

The semiconductor maskmaking industry imposes challenging requirements for the uniformity of critical dimensions (CD) and placement error. In electron beam lithography (EBL), electrons backscatter from the resist and substrate, reach the bottom of objective lens and come back to the resist, causing undesirable exposure and charging far away from the point of exposure. This fogging effects both CD variation and placement accuracy in EBL. The Monte Carlo software CHARIOT was upgraded to be capable of simulating this fogging effect. The results of simulations are presented. It was found that Gaussian approximation is sufficient; the approximation parameters were found for various working distances. The results were used for the correction of charging placement error. Fogging is one of the major contributing factors to the charging placement error; the DISPLACE software tool predicts the displacement map for any layout, which allows for the correction of placement error in maskmaking.

Citation Download Citation

Sergey Babin, Sergey Borisov, and Elena Patyukova "Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software", Proc. SPIE 8886, 29th European Mask and Lithography Conference, 88860E (1 October 2013); https://doi.org/10.1117/12.2032414

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