Paper
8 March 2014 High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime
Craig G. Moe, James R. Grandusky, Jianfeng Chen, Ken Kitamura, Mark C. Mendrick, Muhammad Jamil, Masato Toita, Shawn R. Gibb, Leo J. Schowalter
Author Affiliations +
Abstract
Recent advances in mid-ultraviolet light-emitting diodes grown pseudomorphically on bulk AlN substrates have led to improved efficiencies and lifetimes. For a 266 nm device an output power of 66 mW at 300 mA has been achieved with an external quantum efficiency of 4.5%. More importantly, the lifetimes of these devices have been increased substantially. Testing of LEDs in both surface mount design (SMD) and TO-39 packages show L50 lifetimes well in excess of 1,000 hours under a variety of case temperatures and currents. Package-related catastrophic failures are eliminated through encapsulation and hermetic sealing, further reducing failure rates and extending the lifetime.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig G. Moe, James R. Grandusky, Jianfeng Chen, Ken Kitamura, Mark C. Mendrick, Muhammad Jamil, Masato Toita, Shawn R. Gibb, and Leo J. Schowalter "High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861V (8 March 2014); https://doi.org/10.1117/12.2037856
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Cited by 5 scholarly publications.
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KEYWORDS
Light emitting diodes

Aluminum nitride

Absorption

Reliability

Crystals

Lead

Ultraviolet radiation

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