Paper
19 February 2014 Exploring Coulomb interaction in piezoelectric materials for assisting the laser cooling of solids
Author Affiliations +
Proceedings Volume 9000, Laser Refrigeration of Solids VII; 90000M (2014) https://doi.org/10.1117/12.2057424
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Realization of anti-Stokes cooling requires high enough photon extraction efficiency as well as quantum efficiency, making the implementation of this technique extremely difficult for semiconductors. Here, for the first time, we demonstrate that the Coulomb interaction between photogenerated electron-hole pairs in strong piezoelectric materials such as GaN/InGaN quantum wells could assist laser cooling. By comparing to the cavity back-action mechanism, we also explain how this process depends upon laser detuning with respect to bandgap. To demonstrate the advantage of this method even further, we present simulations by using experimentally reported parameters of GaN and In0.15Ga0.85N, in order to conclude that the net cooling is indeed possible even with current III-nitride growth technology.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iman Hassani Nia and Hooman Mohseni "Exploring Coulomb interaction in piezoelectric materials for assisting the laser cooling of solids", Proc. SPIE 9000, Laser Refrigeration of Solids VII, 90000M (19 February 2014); https://doi.org/10.1117/12.2057424
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KEYWORDS
Phonons

Absorption

Quantum efficiency

Quantum wells

Solids

Gallium nitride

Group III-V semiconductors

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