CVD diamond film oxidation resistance research

Longwei Jing; Xiaoping Wang; Lijun Wang; Xiufang Pan; Yiqing Sun; Jinye Wang; Hongtao Sun

doi:10.1117/12.2053922

16 December 2013 CVD diamond film oxidation resistance research

Longwei Jing, Xiaoping Wang, Lijun Wang, Xiufang Pan, Yiqing Sun, Jinye Wang, Hongtao Sun

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681B (2013) https://doi.org/10.1117/12.2053922
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

Diamond films were deposited on a silicon substrate by microwave plasma chemical vapor deposition system, and its oxidation experiments were carried out in atmospheric environmental condition by using a muffle furnace. Inatmospheric environment (the temperature is from 400°C to 900°C) the oxidation resistance of diamond thin films was investigated. The results indicate that under the atmospheric environment diamond thin film surface morphology did not change after 6 hours at 400°C. Diamond thin film surface morphology began to change after 2 hours at 600°C, and when time was extended to 4 hours, the diamond thin film surface morphology changed significantly. The surface morphology of diamond films began to change after 15 minutes at a 700°C condition and when time was extended to 6 hours diamond films were all destroyed. All the diamond films on the silicon substrate disappeared completely in 20 minutes at 900°C. The intact crystal face is the reason that natural diamond has stable chemical property. The crystal face of synthetic diamond film has a lot of defects, especially on the side. Oxidation of the diamond films begin with the grain boundary and defects.

Citation Download Citation

Longwei Jing, Xiaoping Wang, Lijun Wang, Xiufang Pan, Yiqing Sun, Jinye Wang, and Hongtao Sun "CVD diamond film oxidation resistance research", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681B (16 December 2013); https://doi.org/10.1117/12.2053922

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available