Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

Edouard Giard; Rachid Taalat; Marie Delmas; Jean-Baptiste Rodriguez; Philippe Christol; Julien Jaeck; Isabelle Ribet-Mohamed

doi:10.1117/12.2050426

24 June 2014 Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

Edouard Giard, Rachid Taalat, Marie Delmas, Jean-Baptiste Rodriguez, Philippe Christol, Julien Jaeck, Isabelle Ribet-Mohamed

Author Affiliations +

Proceedings Volume 9070, Infrared Technology and Applications XL; 90700W (2014) https://doi.org/10.1117/12.2050426
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

We first present an electro-optical characterization of the radiometric performances of a type-II InAs/GaSb superlattice (T2SL) pin photodiode operating in the mid-wavelength infrared domain. This photodiode was grown with an InAs-rich structure. We focused our attention on quantum efficiency and responsivity: quantum efficiency of mono-pixel device reaches 23% at λ = 2.1 μm for 1 μm thick SL structure and 77K operating temperature. Then we measured the angular response of this photodiode: the response of the photodiode doesn’t depend on the angle of incidence of the flux. We also report the QE of 2μm-thick InAs-rich T2SL pin 320×256 pixels focal plane array, which reaches 61% at λ = 2.6 μm.

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Edouard Giard, Rachid Taalat, Marie Delmas, Jean-Baptiste Rodriguez, Philippe Christol, Julien Jaeck, and Isabelle Ribet-Mohamed "Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs", Proc. SPIE 9070, Infrared Technology and Applications XL, 90700W (24 June 2014); https://doi.org/10.1117/12.2050426

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