Ultra-short gates improve the performance of high-speed gated single-photon avalanche diodes

Alessandro Restelli; Joshua C. Bienfang; Alan L. Migdall

doi:10.1117/12.2050808

28 May 2014 Ultra-short gates improve the performance of high-speed gated single-photon avalanche diodes

Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall

Proceedings Volume 9114, Advanced Photon Counting Techniques VIII; 911409 (2014) https://doi.org/10.1117/12.2050808
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

We gate a InGaAs/InP single-photon avalanche diode with a narrow periodic gate obtained by summing a 1.25 GHz sinusoid with its second and third harmonic. The temporal full-width at half maximum (FWHM) of the gate is kept below 200 ps by adjusting relative weight of the harmonic components. Measurements of detection efficiency and afterpulse probability as the gate pulse duration is reduced show that it is possible to reach the same detection efficiency obtainable with wider gates with the advantage of significantly reducing afterpulse probability.

Citation Download Citation

Alessandro Restelli, Joshua C. Bienfang, and Alan L. Migdall "Ultra-short gates improve the performance of high-speed gated single-photon avalanche diodes", Proc. SPIE 9114, Advanced Photon Counting Techniques VIII, 911409 (28 May 2014); https://doi.org/10.1117/12.2050808

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