Paper
30 July 2014 Superlattice-doped silicon detectors: progress and prospects
Michael E. Hoenk, Shouleh Nikzad, Alexander G. Carver, Todd J. Jones, John Hennessy, April D. Jewell, Joseph Sgro, Shraga Tsur, Mickel McClish, Richard Farrell
Author Affiliations +
Abstract
In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 1014 cm-2. Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Hoenk, Shouleh Nikzad, Alexander G. Carver, Todd J. Jones, John Hennessy, April D. Jewell, Joseph Sgro, Shraga Tsur, Mickel McClish, and Richard Farrell "Superlattice-doped silicon detectors: progress and prospects", Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI, 915413 (30 July 2014); https://doi.org/10.1117/12.2057678
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Cited by 14 scholarly publications.
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KEYWORDS
Sensors

Doping

Silicon

Interfaces

Superlattices

Quantum efficiency

Deep ultraviolet

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