Hybrid III-V/silicon SOA for photonic integrated circuits

P. Kaspar; R. Brenot; A. Le Liepvre; A. Accard; D. Make; G. Levaufre; N. Girard; F. Lelarge; G.-H. Duan; S. Olivier; Christophe Jany; C. Kopp; S. Menezo

doi:10.1117/12.2074617

13 November 2014 Hybrid III-V/silicon SOA for photonic integrated circuits

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G.-H. Duan, S. Olivier, Christophe Jany, C. Kopp, S. Menezo

Author Affiliations +

Proceedings Volume 9277, Nanophotonics and Micro/Nano Optics II; 927708 (2014) https://doi.org/10.1117/12.2074617
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing. As the number of components in a PIC grows, loss management becomes more and more important. Integrated semiconductor optical amplifiers (SOA) will be crucial components in future photonic systems for loss compensation. In addition, there are specific applications, where SOAs can play a key role beyond mere loss compensation, such as modulated reflective SOAs in carrier distributed passive optical networks or optical gates in packet switching. It is, therefore, highly desirable to find a generic integration platform that includes the possibility of integrating SOAs on silicon. Various methods are currently being developed to integrate light emitters on silicon-on-insulator (SOI) waveguide circuits. Many of them use III-V materials for the hybrid integration on SOI. Various types of lasers have been demonstrated by several groups around the globe. In some of the integration approaches, SOAs can be implemented using essentially the same technology as for lasers. In this paper we will focus on SOA devices based on a hybrid integration approach where III-V material is bonded on SOI and a vertical optical mode transfer is used to couple light between SOI waveguides and guides formed in bonded III-V semiconductor layers. In contrast to evanescent coupling schemes, this mode transfer allows for a higher confinement factor in the gain material and thus for efficient light amplification over short propagation distances. We will outline the fabrication process of our hybrid components and present some of the most interesting results from a fabricated and packaged hybrid SOA.

Citation Download Citation

P. Kaspar, R. Brenot, A. Le Liepvre, A. Accard, D. Make, G. Levaufre, N. Girard, F. Lelarge, G.-H. Duan, S. Olivier, Christophe Jany, C. Kopp, and S. Menezo "Hybrid III-V/silicon SOA for photonic integrated circuits", Proc. SPIE 9277, Nanophotonics and Micro/Nano Optics II, 927708 (13 November 2014); https://doi.org/10.1117/12.2074617

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available