Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography

LongGui Dai; Fan Yang; Gen Yue; Yang Jiang; Haiqiang Jia; Wenxin Wang; Hong Chen

doi:10.1117/12.2072991

13 November 2014 Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography

LongGui Dai, Fan Yang, Gen Yue, Yang Jiang, Haiqiang Jia, Wenxin Wang, Hong Chen

Author Affiliations +

Proceedings Volume 9277, Nanophotonics and Micro/Nano Optics II; 927715 (2014) https://doi.org/10.1117/12.2072991
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

Generally, nano-scale patterned sapphire substrate (NPSS) has better performance than micro-scale patterned sapphire substrate (MPSS) in improving the light extraction efficiency of LEDs. Laser interference lithography (LIL) is one of the powerful fabrication methods for periodic nanostructures without photo-masks for different designs. However, Lloyd’s mirror LIL system has the disadvantage that fabricated patterns are inevitably distorted, especially for large-area twodimensional (2D) periodic nanostructures. Herein, we introduce two-beam LIL system to fabricate consistent large-area NPSS. Quantitative analysis and characterization indicate that the high uniformity of the photoresist arrays is achieved. Through the combination of dry etching and wet etching techniques, the well-defined NPSS with period of 460 nm were prepared on the whole sapphire substrate. The deviation is 4.34% for the bottom width of the triangle truncated pyramid arrays on the whole 2-inch sapphire substrate, which is suitable for the application in industrial production of NPSS.

Citation Download Citation

LongGui Dai, Fan Yang, Gen Yue, Yang Jiang, Haiqiang Jia, Wenxin Wang, and Hong Chen "Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography", Proc. SPIE 9277, Nanophotonics and Micro/Nano Optics II, 927715 (13 November 2014); https://doi.org/10.1117/12.2072991

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