Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

P. Biagioni; E. Sakat; L. Baldassarre; Eugenio Calandrini; A. Samarelli; K. Gallacher; Jacopo Frigerio; G. Isella; D. J. Paul; M. Ortolani

doi:10.1117/12.2084500

16 March 2015 Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

P. Biagioni, E. Sakat, L. Baldassarre, Eugenio Calandrini, A. Samarelli, K. Gallacher, Jacopo Frigerio, G. Isella, D. J. Paul, M. Ortolani

Author Affiliations +

Proceedings Volume 9357, Physics and Simulation of Optoelectronic Devices XXIII; 93570G (2015) https://doi.org/10.1117/12.2084500
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

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P. Biagioni, E. Sakat, L. Baldassarre, Eugenio Calandrini, A. Samarelli, K. Gallacher, Jacopo Frigerio, G. Isella, D. J. Paul, and M. Ortolani "Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570G (16 March 2015); https://doi.org/10.1117/12.2084500

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