Temperature-dependent study of Si-based GeSn photoconductors

Thach Pham; Wei Du; Joe Margetis; Seyed Amir Ghetmiri; Aboozar Mosleh; Greg Sun; Richard A. Soref; John Tolle; Hameed A. Naseem; Baohua Li; Shui-Qing Yu

doi:10.1117/12.2079580

27 February 2015 Temperature-dependent study of Si-based GeSn photoconductors

Thach Pham, Wei Du, Joe Margetis, Seyed Amir Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua Li, Shui-Qing Yu

Author Affiliations +

Proceedings Volume 9367, Silicon Photonics X; 93670S (2015) https://doi.org/10.1117/12.2079580
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Si based Ge1-xSnx photoconductors, with Sn incorporation of 0.9, 3.2, and 7%, were fabricated using a CMOS-compatible process. Temperature dependent study was conducted from 300 to 77 K. The first generation device (standard photoconductor, PD) shows long wavelength cut-off beyond 2.1 μm for 7%-Sn devices at room temperature. The peak responsivity and D* of the 7% Sn device at 1.55 μm were obtained at 77K as 0.08 A/W and 1×10⁹ cm*Hz^1/2*W^-1, respectively. Improved responsivity and specific detectivity (D*) were observed on second generation devices by a newly designed electrode structure (photoconductor with interdigitated electrodes, IEPD). The enhancement factor of responsivity was up to 15 at 77 K.

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Thach Pham, Wei Du, Joe Margetis, Seyed Amir Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu "Temperature-dependent study of Si-based GeSn photoconductors", Proc. SPIE 9367, Silicon Photonics X, 93670S (27 February 2015); https://doi.org/10.1117/12.2079580

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