Formation of microstructures by selective wet-etching of amorphous As-S-Se thin films

A. Bulanovs; J. Snikeris

doi:10.1117/12.2081451

22 October 2014 Formation of microstructures by selective wet-etching of amorphous As-S-Se thin films

A. Bulanovs, J. Snikeris

Proceedings Volume 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8); 942109 (2014) https://doi.org/10.1117/12.2081451
Event: Eighth International Conference on Advanced Optical Materials and Devices, 2014, Riga, Latvia

Abstract

The present article is focused on the optical properties of amorphous As-S-Se thin films and chemical wet-etching in organic non-aqua amine-based solution. Different etching rates depending upon the sample exposure dose and etchant concentration were found. The maximum selective etching ratio 7:1 for samples was achieved. An interference method of in situ real-time monitoring of etching rate for the area with different exposure doses for the same sample was proposed. The efficiency of formation of relief gratings for amorphous As-S-Se thin films depending on the exposure dose was studied. Quality holographic gratings with diffraction efficiency (DE) of up to 65% were received. The results of the current study demonstrate an adequate etching selectivity for fabricating micro structures and possibility of practical application of amorphous chalcogenide thin films in holography and optical lithography.

Citation Download Citation

A. Bulanovs and J. Snikeris "Formation of microstructures by selective wet-etching of amorphous As-S-Se thin films", Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 942109 (22 October 2014); https://doi.org/10.1117/12.2081451

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