Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication

S. L. Shy; Anil Kumar T.V.; Gene Sheu; Shao-Ming Yang; M. C. Chen; C. S. Hong

doi:10.1117/12.2075381

19 March 2015 Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication

S. L. Shy, Anil Kumar T.V., Gene Sheu, Shao-Ming Yang, M. C. Chen, C. S. Hong

Proceedings Volume 9423, Alternative Lithographic Technologies VII; 94231M (2015) https://doi.org/10.1117/12.2075381
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Nano-imprinting technology, as one of the most promising fabrication technologies, has been demonstrated to be a powerful tool for large-area replication up to wafer-level, with features down to nanometer scale. This study aims to develop capabilities in patterning nano structure using thermal nano-imprint lithography (NIL). 30nm Si molds are patterned by electron-beam lithography (EBL) using NEB22 A2 negative e-beam resist. The NEB22 A2 negative e-beam resist possess a variety of characteristics desirable for NIL, such as low viscosity, low bulk-volumetric shrinkage, high Young's modulus, high thermal stability, and excellent dry-etch resistance. The excellent oxygenetch resistance of the barrier material enables a final transfer pattern that is about three times higher than that of the original NIL mold. Based on these imprint on negative electron beam resist approach is used for pattern transfer into silicon substrates. The result is a high-resolution pattern with feature sizes in the range of nanometer to several microns.

Citation Download Citation

S. L. Shy, Anil Kumar T.V., Gene Sheu, Shao-Ming Yang, M. C. Chen, and C. S. Hong "Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94231M (19 March 2015); https://doi.org/10.1117/12.2075381

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