CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy

Koji Shinohara; Yoshito Nishijima; Hiroji Ebe; Osamu Ueda

doi:10.1117/12.947372

15 August 1988 CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy

Koji Shinohara, Yoshito Nishijima, Hiroji Ebe, Osamu Ueda

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947372
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Epitaxial thin layer marcury-cadmium telluride has recently become the most widely used infrared ckector material. For epitaxial growth, cadmium telluride is usually used as a substrate(1). Unfortunately, bulk cadmium telluride tends to twin, therefore large single crystals are difficult and expensive to preparA, It is hoped that GaAs with a CdTe buffer layer will be suitable for use as a substrate(2). We have investigated (111) CdTe growth on B facet of (111) GaAs by hot-wall epitaxy and evaluated the quality of the wafer. In this paper, first the introduction of the main feature of hot-wall epitaxial growth is shown. Next, the growth conditions of CdTe on GaAs is denoted. After presenting the evaluation results, this paper is summarized.

Citation Download Citation

Koji Shinohara, Yoshito Nishijima, Hiroji Ebe, and Osamu Ueda "CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947372

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