Terahertz electronics for sensing and imaging applications

Michael Shur

doi:10.1117/12.2085442

22 May 2015 Terahertz electronics for sensing and imaging applications

Michael Shur

Proceedings Volume 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII; 94672A (2015) https://doi.org/10.1117/12.2085442
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

Short channel field effect transistors can detect terahertz radiation. Such detection is enabled by the excitation of the plasma waves rectified due to the device nonlinearities. The resulting response has nanometer scale spatial resolution and can be modulated in the sub THz range. This technology could enable a variety of sensing, imaging, and wireless communication applications, including detection of biological and chemical hazardous agents, cancer detection, shortrange covert communications (in THz and sub-THz windows), and applications in radio astronomy. Field effect transistors implemented using III-V, III-N, Si, SiGe, and graphene have been used to detect THz radiation. Using silicon transistors in plasmonic regimes is especially appealing because of compatibility with standard readout silicon VLSI components.

Citation Download Citation

Michael Shur "Terahertz electronics for sensing and imaging applications", Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94672A (22 May 2015); https://doi.org/10.1117/12.2085442

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