Paper
1 September 2015 MWIR unipolar barrier photodetectors based on strained layer superlattices
Author Affiliations +
Abstract
In this work, we report on the design, fabrication, and characterization of MWIR unipolar barrier photodetectors based on InAs/GaSb Type-II superlattice. We have designed, fabricated, and characterized band-structure engineered MWIR photodetectors based on the pBiBn architecture. The devices have been characterized using the most relevant radiometric figures of merits. At 200 K, the peak value of detectivity is 1.2 x 1011 Jones at an applied bias voltage of -0.5 V.
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David A. Ramirez, Stephen A. Myers, Elena Plis, Yuliya Kuznetsova, Christian P. Morath, Vincent M. Cowan, and Sanjay Krishna "MWIR unipolar barrier photodetectors based on strained layer superlattices", Proc. SPIE 9616, Nanophotonics and Macrophotonics for Space Environments IX, 96160F (1 September 2015); https://doi.org/10.1117/12.2188332
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KEYWORDS
Mid-IR

Sensors

Photodetectors

Superlattices

Quantum efficiency

Laser sintering

Absorption

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