Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

Nan Yao; Wei Li; Yihao Zhao; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.1117/12.2199049

15 October 2015 Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

Nan Yao, Wei Li, Yihao Zhao, Li Zhong, Suping Liu, Xiaoyu Ma

Author Affiliations +

Proceedings Volume 9671, AOPC 2015: Advances in Laser Technology and Applications; 96710H (2015) https://doi.org/10.1117/12.2199049
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

High power semiconductor laser is widely used because of its high transformation efficiency, good working stability, compact volume and simple driving requirements. Laser’s lifetime is very long, but tests at high levels of stress can speed up the failure process and shorten the times to failure significantly. So accelerated life test is used here for forecasting the lifetime of 808nm CW GaAs/AlGaAs high power semiconductor laser that has an output power of 1W under 1.04A. Accelerated life test of constant current stress based on the Inverse Power Law Relationship was designed. Tests were conducted under 1.3A, 1.6A and 1.9A at room temperature. It is the first time that this method is used in the domestic research of laser’s lifetime prediction. Applying Weibull Distribution to describe the lifetime distribution and analyzing the data of times to failure, characteristics lifetime’s functional relationship model with current is achieved. Then the characteristics lifetime under normal current is extrapolated, which is 9473h. Besides, to confirm the validity of the functional relationship model, we conduct an additional accelerated life test under 1.75A. Based on this experimental data we calculated the characteristics lifetime corresponding to 1.75A that is 171h, while the extrapolated characteristics lifetime from the former functional relationship model is 162h. The two results shows 5% deviation that is very low and acceptable, which indicates that the test design is reasonable and authentic.

Citation Download Citation

Nan Yao, Wei Li, Yihao Zhao, Li Zhong, Suping Liu, and Xiaoyu Ma "Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress", Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96710H (15 October 2015); https://doi.org/10.1117/12.2199049

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Accelerated life testing

Semiconductor lasers

High power lasers

Data modeling

Failure analysis

Analytical research

Continuous wave operation

Show All Keywords

Keywords/Phrases

Search In:

Publication Years