Paper
10 March 2016 1.2μm emitting VECSEL based on type-II aligned QWs
C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, S. W. Koch, J. Hader, J. V. Moloney, W. Stolz
Author Affiliations +
Abstract
Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, S. W. Koch, J. Hader, J. V. Moloney, and W. Stolz "1.2μm emitting VECSEL based on type-II aligned QWs", Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340H (10 March 2016); https://doi.org/10.1117/12.2212438
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KEYWORDS
Quantum wells

Resistance

Gallium arsenide

Optical microcavities

Semiconductor lasers

Infrared radiation

Ultraviolet radiation

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