Paper
4 March 2016 Toward designing back-illuminated CMOS image sensor based on 3D modeling
Y. G. Xiao, K. Uehara, Y. Fu, M. Lestrade, Z. Q. Li, Y. J. Zhou, Z. M. Simon Li
Author Affiliations +
Abstract
Three-dimensional (3D) modeling is reported for CMOS active pixel image sensors particularly by comparing front surface and back-surface illumination. The opto-electronic responses are presented versus various power intensity and illumination wavelength. The optical efficiency and quantum efficiency from FDTD modeling are also presented. For appropriately designed sensor structure, it is shown that back-surface illumination pixel could achieve improved sensitivity within certain wavelength range. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. G. Xiao, K. Uehara, Y. Fu, M. Lestrade, Z. Q. Li, Y. J. Zhou, and Z. M. Simon Li "Toward designing back-illuminated CMOS image sensor based on 3D modeling", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420A (4 March 2016); https://doi.org/10.1117/12.2213549
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KEYWORDS
3D modeling

Quantum efficiency

Copper indium disulfide

Finite-difference time-domain method

Sensors

Optoelectronics

CMOS sensors

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