Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements

K. Kawakami; T. Nakano; A. A. Yamaguchi

doi:10.1117/12.2211914

26 February 2016 Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements

K. Kawakami, T. Nakano, A. A. Yamaguchi

Author Affiliations +

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97480S (2016) https://doi.org/10.1117/12.2211914
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolved and temperature-dependent photoluminescence (PL) measurements by assuming that internal quantum efficiency (IQE) at cryogenic temperature is unity. In our recent study, we found that the assumption is not necessarily valid, from simultaneous measurements of PL and photo-acoustic (PA) signals. In this study, we estimate accurate lifetimes from the reliable IQE values estimated by the simultaneous PL/PA measurements, and it is found that radiative lifetime in GaN increases in proportion to the 1.5th power of temperature and that non-radiative lifetime shows little temperature dependence although the non-radiative lifetime itself largely depends on sample quality.

Citation Download Citation

K. Kawakami, T. Nakano, and A. A. Yamaguchi "Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480S (26 February 2016); https://doi.org/10.1117/12.2211914

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