Paper
21 April 2016 Electric fields in Scanning Electron Microscopy simulations
K. T. Arat, J. Bolten, T. Klimpel, N. Unal
Author Affiliations +
Abstract
The electric field distribution and charging effects in Scanning Electron Microscopy (SEM) were studied by extending a Monte-Carlo based SEM simulator by a fast and accurate multigrid (MG) based 3D electric field solver. The main focus is on enabling short simulation times with maintaining sufficient accuracy, so that SEM simulation can be used in practical applications. The implementation demonstrates a gain in computation speed, when compared to a Gauss-Seidel based reference solver is roughly factor of 40, with negligible differences in the result (~10−6 𝑉). In addition, the simulations were compared with experimental SEM measurements using also complex 3D sample, showing that i) the modelling of e-fields improves the simulation accuracy, and ii) multigrid method provide a significant benefit in terms of simulation time.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. Arat, J. Bolten, T. Klimpel, and N. Unal "Electric fields in Scanning Electron Microscopy simulations", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780C (21 April 2016); https://doi.org/10.1117/12.2219182
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Monte Carlo methods

Scanning electron microscopy

Electrons

Magnesium

3D modeling

Silicon

Inspection

RELATED CONTENT


Back to Top