Paper
18 March 2016 Investigation on the relationship between CD and CDU in memory devices
Author Affiliations +
Abstract
As pattern design rule of device shrinks, CD control becomes more critical and important especially for resistance devices. As CD (Critical Dimension) increases, CDU (Critical Dimension Uniformity) becomes worse generally. The question with this relationship is a starting point of our study. Mainly we focused on two points. One is which factor affects CDU. The other is whether CDU degradation with large CD happens at all cases or not. We have analyzed with simulation and experiment results about CDU with splitted mask layout CD under limited conditions such as same equipment, illumination and exposure dose. As a result, we will show the relationship between CD size and CDU.
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Jeongsu Park, Daewoo Kim, Keunjun Kim, Choidong Kim, Sungkoo Lee, and Hyeongsoo Kim "Investigation on the relationship between CD and CDU in memory devices", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782T (18 March 2016); https://doi.org/10.1117/12.2219569
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KEYWORDS
Nanoimprint lithography

Critical dimension metrology

Photomasks

Semiconducting wafers

Control systems

Electroluminescence

Line edge roughness

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