Process tool monitoring and matching using interferometry technique

Doug Anberg; David M. Owen; Jeffrey Mileham; Byoung-Ho Lee; Eric Bouche

doi:10.1117/12.2220479

8 March 2016 Process tool monitoring and matching using interferometry technique

Doug Anberg, David M. Owen, Jeffrey Mileham, Byoung-Ho Lee, Eric Bouche

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 977831 (2016) https://doi.org/10.1117/12.2220479
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The semiconductor industry makes dramatic device technology changes over short time periods. As the semiconductor industry advances towards to the 10 nm device node, more precise management and control of processing tools has become a significant manufacturing challenge. Some processes require multiple tool sets and some tools have multiple chambers for mass production. Tool and chamber matching has become a critical consideration for meeting today’s manufacturing requirements. Additionally, process tools and chamber conditions have to be monitored to ensure uniform process performance across the tool and chamber fleet. There are many parameters for managing and monitoring tools and chambers. Particle defect monitoring is a well-known and established example where defect inspection tools can directly detect particles on the wafer surface. However, leading edge processes are driving the need to also monitor invisible defects, i.e. stress, contamination, etc., because some device failures cannot be directly correlated with traditional visualized defect maps or other known sources. Some failure maps show the same signatures as stress or contamination maps, which implies correlation to device performance or yield.

In this paper we present process tool monitoring and matching using an interferometry technique. There are many types of interferometry techniques used for various process monitoring applications. We use a Coherent Gradient Sensing (CGS) interferometer which is self-referencing and enables high throughput measurements. Using this technique, we can quickly measure the topography of an entire wafer surface and obtain stress and displacement data from the topography measurement. For improved tool and chamber matching and reduced device failure, wafer stress measurements can be implemented as a regular tool or chamber monitoring test for either unpatterned or patterned wafers as a good criteria for improved process stability.

Citation Download Citation

Doug Anberg, David M. Owen, Jeffrey Mileham, Byoung-Ho Lee, and Eric Bouche "Process tool monitoring and matching using interferometry technique", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977831 (8 March 2016); https://doi.org/10.1117/12.2220479

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