Development of dual-band barrier detectors

Elena Plis; Stephen A. Myers; David A. Ramirez; Sanjay Krishna

doi:10.1117/12.2228166

20 May 2016 Development of dual-band barrier detectors

Elena Plis, Stephen A. Myers, David A. Ramirez, Sanjay Krishna

Proceedings Volume 9819, Infrared Technology and Applications XLII; 981911 (2016) https://doi.org/10.1117/12.2228166
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10.0 μm), and LW/LWIR (cut-off wavelengths are 9 μm and 11.0 μm) detectors with nBn and pBp designs. Recent results include a high performance bias-selectable long/long-wavelength infrared photodetector based on T2SL with a pBp barrier architecture. The two channels 50% cut-off wavelengths were ~ 9.2 μm and ~ 12 μm at 77 K. The “blue” and “red” LWIR absorbers demonstrated saturated QE values of 34 % and 28 %, respectively, measured in a backside illuminated configuration with a ~ 35 μm thick layer of residual GaSb substrate. Bulk-limited dark current levels were ~ 2.6 x 10^-7 A/cm² at + 100 mV and ~ 8.3 x 10^-4 A/cm² at - 200 mV for the “blue” and “red” channels, respectively.

Citation Download Citation

Elena Plis, Stephen A. Myers, David A. Ramirez, and Sanjay Krishna "Development of dual-band barrier detectors", Proc. SPIE 9819, Infrared Technology and Applications XLII, 981911 (20 May 2016); https://doi.org/10.1117/12.2228166

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