Growth mechanism of nanowires: binary and ternary chalcogenides

N. B. Singh; S. R. Coriell; Ching Hua Su; R. H. Hopkins; B. Arnold; Fow-Sen Choa; Brian Cullum

doi:10.1117/12.2220154

13 May 2016 Growth mechanism of nanowires: binary and ternary chalcogenides

N. B. Singh, S. R. Coriell, Ching Hua Su, R. H. Hopkins, B. Arnold, Fow-Sen Choa, Brian Cullum

Proceedings Volume 9863, Smart Biomedical and Physiological Sensor Technology XIII; 986304 (2016) https://doi.org/10.1117/12.2220154
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acoustooptical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Citation Download Citation

N. B. Singh, S. R. Coriell, Ching Hua Su, R. H. Hopkins, B. Arnold, Fow-Sen Choa, and Brian Cullum "Growth mechanism of nanowires: binary and ternary chalcogenides", Proc. SPIE 9863, Smart Biomedical and Physiological Sensor Technology XIII, 986304 (13 May 2016); https://doi.org/10.1117/12.2220154

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