Design of optimal buffer layers for CuInGaSe2 thin-film solar cells
(Conference Presentation)

Vincenzo Lordi; Joel B. Varley; Xiaoqing He; Angus A. Rockett; Jeff Bailey; Geordie H. Zapalac; Neil Mackie; Dmitry Poplavskyy; Atiye Bayman

doi:10.1117/12.2237243

2 November 2016 Design of optimal buffer layers for CuInGaSe₂ thin-film solar cells(Conference Presentation)

Vincenzo Lordi, Joel B. Varley, Xiaoqing He, Angus A. Rockett, Jeff Bailey, Geordie H. Zapalac, Neil Mackie, Dmitry Poplavskyy, Atiye Bayman

Author Affiliations +

Proceedings Volume 9936, Thin Films for Solar and Energy Technology VIII; 993609 (2016) https://doi.org/10.1117/12.2237243
Event: SPIE Optics + Photonics for Sustainable Energy, 2016, San Diego, California, United States

Abstract

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Conference Presentation

Citation Download Citation

Vincenzo Lordi, Joel B. Varley, Xiaoqing He, Angus A. Rockett, Jeff Bailey, Geordie H. Zapalac, Neil Mackie, Dmitry Poplavskyy, and Atiye Bayman "Design of optimal buffer layers for CuInGaSe₂ thin-film solar cells(Conference Presentation)", Proc. SPIE 9936, Thin Films for Solar and Energy Technology VIII, 993609 (2 November 2016); https://doi.org/10.1117/12.2237243

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Interfaces

Crystals

Thin film solar cells

Process control

Thin films

Control systems

Copper indium gallium selenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years