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7 December 2016 Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation)
David A. Ramirez, Stephen A. Myers, Yuliya Kuznetsova, Sen Mathews, Theodore Schuler-Sandy, Elizabeth H. Steenbergen, Christian P. Morath, Vicent M. Cowan, Sanjay Krishna
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Proceedings Volume 9974, Infrared Sensors, Devices, and Applications VI; 99740C (2016) https://doi.org/10.1117/12.2239723
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States
Abstract
In this work, we compare the performance of three MWIR unipolar barrier structures based on the InAs/GaSb Type-2 strained layer superlattice material system. We have designed, fabricated, and characterized pBiBn, pBn, and pBp detector structures. All the structures have been designed so that the cut off wavelength is around 5 microns at 100 K. We fabricated single-pixel devices and characterize their radiometric performance. In addition, we have characterized the degradation of the performance of the devices after exposing the devices to 63 MeV proton radiation to total ionizing dose of 100 kRad (Si). In this report, we compare the performance of the different structures with the objective of determining the advantages and disadvantages of the different designs. This work was supported by the Small Business Innovation Research (SBIR) program under the contract FA9453-14-C-0032, sponsored by the Air Force Research Laboratory (AFRL).
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David A. Ramirez, Stephen A. Myers, Yuliya Kuznetsova, Sen Mathews, Theodore Schuler-Sandy, Elizabeth H. Steenbergen, Christian P. Morath, Vicent M. Cowan, and Sanjay Krishna "Comparison of MWIR unipolar barrier structures based on strained layer superlattices (Conference Presentation)", Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 99740C (7 December 2016); https://doi.org/10.1117/12.2239723
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KEYWORDS
Mid-IR
Superlattices
Analytical research
Ionizing radiation
Sensors
Silicon
Structural design
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