Defect management on photomasks with dry treatment assistance

Irene Shi; Eric Guo; Max Lu

doi:10.1117/12.2240469

5 October 2016 Defect management on photomasks with dry treatment assistance

Irene Shi, Eric Guo, Max Lu

Proceedings Volume 9985, Photomask Technology 2016; 998522 (2016) https://doi.org/10.1117/12.2240469
Event: SPIE Photomask Technology, 2016, San Jose, California, United States

Abstract

One of the key challenges of photomask manufacture is to achieve defect-free masks. Clean and repair has been applied to manage defects and particles on the mask imported during manufacturing processes. Since photomask patterns become smaller and more complicated as integrated circuit (IC) scaling to 28 nm node and below, the increasingly importance of mask quality compels us continuously research on more effective defect treatment solutions, to achieve mask yield enhancement and on-schedule delivery. In this paper, we would like to introduce new approaches of defect management with dry treatment assistance, according to particular defect types. One is using plasma etching gases of Cl2/O2 to change the properties of glue compounds adhering to the mask surface, and make them removed by conventional cleaning. Another is the application of O2 plasma dry treatment for the benefit of alleviation on scan damage phenomenon, which comes from contamination on the scan area due to excessive repair cycles.

Citation Download Citation

Irene Shi, Eric Guo, and Max Lu "Defect management on photomasks with dry treatment assistance", Proc. SPIE 9985, Photomask Technology 2016, 998522 (5 October 2016); https://doi.org/10.1117/12.2240469

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